#------------------------------------------------------------------------------
#$Date: 2020-08-03 12:55:41 +0300 (Mon, 03 Aug 2020) $
#$Revision: 254740 $
#$URL: file:///home/coder/svn-repositories/cod/cif/1/55/87/1558725.cif $
#------------------------------------------------------------------------------
#
# This file is available in the Crystallography Open Database (COD),
# http://www.crystallography.net/
#
# All data on this site have been placed in the public domain by the
# contributors.
#
data_1558725
loop_
_publ_author_name
'Usui, H.'
'Kusakabe, H.'
'Tokuda, M.'
'Sugiyama, K.'
'Hoshina, T.'
'Tsurumi, T.'
'Takeda, H.'
_publ_section_title
;
 Structure and electrical properties of Ba3TaGa3Si2O14 single crystals
 grown by Czochralski method
;
_journal_name_full               'Journal of the Ceramic Society of Japan'
_journal_page_first              441
_journal_page_last               446
_journal_paper_doi               10.2109/jcersj2.20016
_journal_volume                  128
_journal_year                    2020
_chemical_formula_sum            'Ba3 Ga3 O14 Si2 Ta'
_chemical_name_common            Ba3TaGa3Si2O14
_space_group_IT_number           150
_space_group_name_Hall           'P 3 2"'
_space_group_name_H-M_alt        'P 3 2 1'
_cell_angle_alpha                90.000000
_cell_angle_beta                 90.000000
_cell_angle_gamma                120.000000
_cell_formula_units_Z            1
_cell_length_a                   8.515(2)
_cell_length_b                   8.515(2)
_cell_length_c                   5.1920(10)
_cell_volume                     326.01(13)
_diffrn_ambient_pressure         100
_diffrn_ambient_temperature      298
_cod_data_source_file            Ba3TaGa5Si2O14.cif
_cod_data_source_block           Ba3TaGa3Si2O14
_cod_original_cell_volume        326.012797
_cod_original_formula_sum        'Ba3 Ta1 Ga3 Si2 O14'
_cod_database_code               1558725
loop_
_space_group_symop_id
_space_group_symop_operation_xyz
1 x,y,z
2 -y,x-y,z
3 -x+y,-x,z
4 y,x,-z
5 x-y,-y,-z
6 -x,-x+y,-z
loop_
_atom_site_label
_atom_site_occupancy
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_adp_type
_atom_site_U_iso_or_equiv
_atom_site_type_symbol
Ba 1.0 0.43212(6) 0.000000 0.000000 Uani 0.0091(1) Ba
Ta 1.0 0.000000 0.000000 0.000000 Uani 0.0069(1) Ta
Si 1.0 0.333333 0.666667 0.4817(5) Uani 0.0063(4) Si
Ga 1.0 0.74520(10) 0.000000 0.500000 Uani 0.0075(2) Ga
O1 1.0 0.333333 0.666667 0.7900(10) Uani 0.011(1) O
O2 1.0 0.4749(7) 0.2992(7) 0.6440(8) Uani 0.0112(8) O
O3 1.0 0.2170(7) 0.1068(7) 0.2247(7) Uani 0.0128(7) O
