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Information card for entry 3000436
Preview
No preview available: structure is on hold until 2023-04-14
Coordinates | Coordinates are not available: structure is on hold until 2023-04-14 |
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Formula | Ge Sn4 V3 Zr3 |
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Title of publication | Synthesis and crystal structure of Zr~3~V~3~GeSn~4~ |
Authors of publication | Niang, K.; Parks, D.; Janssen, Y.; Jack Simonson |
Journal of publication | To be published in Crystals |
a | 9.229 ± 0.0002 Å |
b | 9.229 ± 0.0002 Å |
c | 5.5671 ± 0.0001 Å |
α | 90° |
β | 90° |
γ | 120° |
Cell volume | 410.647 ± 0.015 Å3 |
Cell temperature | 294 K |
Ambient diffraction temperature | 294 K |
Number of distinct elements | 4 |
Hermann-Mauguin space group symbol | P 63/m m c |
Hall space group symbol | -P 6c 2c |
Residual factor for all reflections | 0.0174 |
Residual factor for significantly intense reflections | 0.0156 |
Weighted residual factors for significantly intense reflections | 0.0277 |
Weighted residual factors for all reflections included in the refinement | 0.028 |
Goodness-of-fit parameter for significantly intense reflections | 2.14 |
Goodness-of-fit parameter for all reflections included in the refinement | 2.12 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | No |
Has disorder | No |
Has Fobs | No |
Version history
Not available for prepublication material.
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Users of the data should acknowledge the original authors of the
structural data.