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Information card for entry 1565015
Preview
| Coordinates | 1565015.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C64 H82 B3 N5 Si2 |
|---|---|
| Calculated formula | C64 H82 B3 N5 Si2 |
| Title of publication | Isolation of a Planar 1,2-Dilithio-disilene and Its Conversion to Si−B Hybrid 2π-Electron System and a Planar Tetraboryldisilene |
| Authors of publication | Tian, Miao; Zhang, Jianying; Guo, Lulu; Cui, Chunming |
| Journal of publication | Chemical Science |
| Year of publication | 2021 |
| a | 13.3902 ± 0.0005 Å |
| b | 13.4787 ± 0.0005 Å |
| c | 18.501 ± 0.0005 Å |
| α | 90.572 ± 0.003° |
| β | 92.148 ± 0.003° |
| γ | 114.215 ± 0.004° |
| Cell volume | 3042 ± 0.2 Å3 |
| Cell temperature | 113.15 K |
| Ambient diffraction temperature | 113.15 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.1071 |
| Residual factor for significantly intense reflections | 0.0773 |
| Weighted residual factors for significantly intense reflections | 0.2066 |
| Weighted residual factors for all reflections included in the refinement | 0.2253 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.107 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 270032 (current) | 2021-10-20 | cif/ Adding structures of 1565015, 1565016, 1565017, 1565018, 1565019 via cif-deposit CGI script. |
1565015.cif |
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Users of the data should acknowledge the original authors of the
structural data.