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Information card for entry 1565019
Preview
| Coordinates | 1565019.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C52 H72 B2 Li2 N4 Si2 |
|---|---|
| Calculated formula | C52 H72 B2 Li2 N4 Si2 |
| Title of publication | Isolation of a Planar 1,2-Dilithio-disilene and Its Conversion to Si−B Hybrid 2π-Electron System and a Planar Tetraboryldisilene |
| Authors of publication | Tian, Miao; Zhang, Jianying; Guo, Lulu; Cui, Chunming |
| Journal of publication | Chemical Science |
| Year of publication | 2021 |
| a | 10.6321 ± 0.0005 Å |
| b | 12.6541 ± 0.0008 Å |
| c | 19.8364 ± 0.001 Å |
| α | 88.291 ± 0.004° |
| β | 89.058 ± 0.004° |
| γ | 82.021 ± 0.004° |
| Cell volume | 2641.6 ± 0.2 Å3 |
| Cell temperature | 113.15 K |
| Ambient diffraction temperature | 113.15 K |
| Number of distinct elements | 6 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.1575 |
| Residual factor for significantly intense reflections | 0.1167 |
| Weighted residual factors for significantly intense reflections | 0.2808 |
| Weighted residual factors for all reflections included in the refinement | 0.3053 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.102 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 270032 (current) | 2021-10-20 | cif/ Adding structures of 1565015, 1565016, 1565017, 1565018, 1565019 via cif-deposit CGI script. |
1565019.cif |
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Users of the data should acknowledge the original authors of the
structural data.