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Information card for entry 1565017
Preview
| Coordinates | 1565017.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C122.08 H165.06 B6 N8 Si4 |
|---|---|
| Calculated formula | C122 H166 B6 N8 Si4 |
| Title of publication | Isolation of a Planar 1,2-Dilithio-disilene and Its Conversion to Si−B Hybrid 2π-Electron System and a Planar Tetraboryldisilene |
| Authors of publication | Tian, Miao; Zhang, Jianying; Guo, Lulu; Cui, Chunming |
| Journal of publication | Chemical Science |
| Year of publication | 2021 |
| a | 17.3657 ± 0.0005 Å |
| b | 17.4514 ± 0.0005 Å |
| c | 39.6637 ± 0.0011 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 12020.3 ± 0.6 Å3 |
| Cell temperature | 113.15 K |
| Ambient diffraction temperature | 113.15 K |
| Number of distinct elements | 5 |
| Space group number | 19 |
| Hermann-Mauguin space group symbol | P 21 21 21 |
| Hall space group symbol | P 2ac 2ab |
| Residual factor for all reflections | 0.1088 |
| Residual factor for significantly intense reflections | 0.0668 |
| Weighted residual factors for significantly intense reflections | 0.1168 |
| Weighted residual factors for all reflections included in the refinement | 0.1348 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.039 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 270032 (current) | 2021-10-20 | cif/ Adding structures of 1565015, 1565016, 1565017, 1565018, 1565019 via cif-deposit CGI script. |
1565017.cif |
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Users of the data should acknowledge the original authors of the
structural data.